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The A1015 is a commonly used PNP transistor with below features and details: Specifications: Type: PNP Transistor Collector-Emitter Voltage (Vce): 50V Collector Current (Ic):...
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The 2SC1623 is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It is housed in a small surface-mount device...
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The FDN304P is a P-channel MOSFET designed for use in low-voltage, high-current switching applications. It is housed in a compact SOT-23 surface-mount device (SMD)...
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The FDN337N is an N-Channel logic level enhancement mode MOSFET designed for efficient switching and amplification in a variety of electronic applications. It is...
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The FDN357P is a P-channel logic level enhancement mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for low-voltage, high-current switching applications. It is housed in a...
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The DMG1012UW-7 is an N-Channel MOSFET designed for high-efficiency switching and amplification in a variety of electronic applications. It is housed in a compact...
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The MMBTA56 is a high-performance PNP bipolar junction transistor (BJT) designed for a wide range of electronic applications. Encased in a compact SOT23 package,...
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The FDN306P is a P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for low-voltage, high-current switching applications. It is housed in a compact SOT-23 surface-mount device...
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The FDN358P is a P-channel logic level enhancement mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for low-voltage, high-current switching applications. It is housed in a...
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The BC858 is a general-purpose PNP bipolar junction transistor (BJT) designed for low-power amplification and switching applications. It is housed in a compact SOT-23...
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The BC847CLT1G is a widely used NPN transistor with the following features and specifications: Specifications: Type: NPN Transistor Collector-Emitter Voltage (Vce): 45V Collector Current...